The UCC27531DBVT is a single-channel, high-speed Gate Driver, can effectively drive MOSFET and IGBT power switches. Using a design that allows for a source of up to 2.5 and 5A sink through asymmetrical drive (split outputs), coupled with the ability to support a negative turn-off bias, Rail-to-rail drive capability, extremely small propagation delay (17ns typical), the UCC27531DBVT device is ideal solutions for MOSFET and IGBT power switches. The UCC27531DBVT device can also support enable, dual input and inverting and non-inverting input functionality. The split outputs and strong asymmetrical drive boost the devices immunity against parasitic Miller turn-on effect and can help reduce ground debouncing. Leaving the input pin open holds the driver output low. The logic behaviour of the driver is shown in the application diagram, timing diagram and input and output logic truth table.
Gate driver (offering optimal solution for driving FET and IGBTs)
Superior replacement to discrete transistor pair drive (providing easy interface with controller)
TTL and CMOS compatible input logic threshold (independent of supply voltage)
Split output options allow for tuning of turn-on and turnoff currents
Inverting and non-inverting input configurations
Enable with fixed TTL compatible threshold
High 2.5A source and 2.5 or 5A sink peak drive current at 18V VDD
Wide VDD range from 10 to 35V
Input and enable pins capable of withstanding up to -5VDC below ground
Output held low when inputs are floating or during VDD UVLO
Fast propagation delays (17ns typical)
Fast rise and fall times (15 and 7ns typical with 1800pF load)
Under-voltage lockout (UVLO)
Used as a high-side or low-side driver (if designed with proper BIAS and signal isolation)
Green product and no Sb/Br
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
