The S29GL01GS10DHI020 is a 1GB GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory fabricated on 65nm process technology. This device offers a fast page access time as fast as 100ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
Lowest address sector protected
Versatile I/O™ - Wide I/O voltage range of 1.65V to VCC
Asynchronous 32-byte page read
Automatic ECC protection applied on each 32-byte page
Suspend and resume commands for program and erase operations
Status register, data polling and ready/busy pin methods to determine device status
Advanced sector protection - Volatile and non-volatile protection methods for each sector