Design various electronic circuits with this versatile NPN STD840DN40 GP BJT from STMicroelectronics. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 3000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.