The NTD5867NLT4G from On Semiconductor is a surface mount, 60V N channel power MOSFET in DPAK package. This device features high current capability, low RDS (on) and avalanche tested thus resulting in minimal conduction losses, robust load performance and voltage overstress safeguard. This MOSFET is used for LED backlighting, DC to DC converter, motor driver and UPS inverter.
Drain to source voltage (Vds) is 600V
Gate to source voltage of ±20V(continuous)
Continuous drain current (Id) is 20A
Power dissipation (Pd) is 36W
Operating junction temperature range from -55°C to 150°C
