These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
1.6A, 30V. RDS(ON) = 0.125W @ VGS = 4.5V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface mount package.
