You won"t need to worry about any lagging in your circuit with this IXXN100N60B3H1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 500000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration. This device utilizes xpt technology.