The HMC903 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier (LNA), which is self biased with the optional bias control for IDQ reduction. It operates between 6 GHz and 18 GHz. This LNA provides 19 dB of small signal gain, 1.6 dB noise figure, and an output third-order intercept (IP3) of 27 dBm, requiring only 90 mA of supply current from a 3.5 V supply. The output power for a 1 dB compression (P1dB) of 16 dBm enables the LNA to function as a local oscillator (LO) driver for balanced, I/Q, or image rejection mixers. The HMC903 also features inputs/outputs that are dc blocked and internally matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the HMC903 in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter with bonds of 0.31 mm (12 mil) length.
Applications
Point to point radios
Point to multipoint radios
Military and space
Test instrumentation
### Features and Benefits
Noise figure: 1.6 dB typical
Small signal gain: 19 dB typical
Output P1dB: 16 dBm typical
Single-supply voltage: 3.5 V at 90 mA typical
Output IP3: 27 dBm typical
50 Ω matched input/output
Self biased with optional bias control for quiescent drain control (IDQ) reduction with no radio frequency (RF) applied