You won"t need to worry about any lagging in your circuit with this APT75GP120B2G IGBT transistor from Microsemi. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 1042000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.