ISO5852S-Q1 数据手册 Datasheet - TI

制造商：
TI
描述：
High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features
文档：

ISO5852S-Q1 数据手册 (42 页)

引脚定义在 3页 Hot

封装外形尺寸在 3页 36页 40页

焊盘在 37页

更新时间： 2024/05/30 04:32:16 (UTC+8)

ISO5852S-Q1 数据手册PDF (42 页)

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ISO5852S-Q1 文档

ISO5852S-Q1 数据手册

42 页, 1282 KB

MOSFET DRVR 2.5A 2Out Hi/Lo Side Inv/Non-Inv 16Pin SOIC T/R

MOSFET DRVR 2.5A/5A 2Out Hi/Lo Side Inv/Non-Inv 16Pin SOIC Tube

High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃

TEXAS INSTRUMENTS ISO5852SEVM Evaluation Board, IGBT Gate Driver, 2.5A Source/5A Sink

High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features 16-SOIC -40℃ to 125℃

High-CMTI 2.5A/5A Isolated IGBT, MOSFET Gate Driver With Split Outputs and Protection Features

5.7 kVrms Split O/P, Reinforced Isolated IGBT Gate Driver 16-SOIC -40℃ to 125℃o

High-CMTI 2.5A / 5A Isolated IGBT, MOSFET Gate Driver

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