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MRFE6VS25NR1 应用笔记 - Avnet

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MRFE6VS25NR1 应用笔记

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MRFE6VS25NR1 MRFE6VS25GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
RF power transistors designed for both narrowband and broadband ISM,
broadcast and aeros pace applications operating at frequencies from 1.8 to
2000 MHz. These devices are fabricated using Freescale’s enhanced
ruggedness platform and are suitable for use in applications where high
VSWRs are encountered.
Typical Performance:
V
DD
=50Volts
Frequency
(MHz)
Signal Type
P
out
(W)
G
ps
(dB)
D
(%)
IMD
(1)
(dBc)
1.8to30
(2,6)
Two--Tone
(10 kHz spacing)
25 PEP 25 51 -- 3 0
30--512
(3,6)
Two--Tone
(200 kHz spacing)
25 PEP 17.1 30.1 -- 3 2
512
(4)
Pulse (100 sec,
20% Duty Cycle)
25 Peak 25.4 74.5
512
(4)
CW 25 25.5 74.7
1030
(5)
CW 25 22.5 60
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
30
(2)
CW
>65:1
at all Phase
Angles
0.23
(3 dB
Overdrive)
50 No Device
Degradation
512
(3)
CW 1.6
(3 dB
Overdrive)
512
(4)
Pulse
(100 sec, 20%
Duty Cycle)
0.14 Peak
(3 dB
Overdrive)
512
(4)
CW 0.14
(3 dB
Overdrive
1030
(5)
CW 0.34
(3 dB
Overdrive
1. Distortion products are referenced to one of two tones. See p. 13, 20.
2. Measured in 1.8--30 MHz broadband reference circuit.
3. Measured in 30--512 MHz broadband reference circuit.
4. Measured in 512 MHz narrowband test circuit.
5. Measured in 1030 MHz narrowband test circuit.
6. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Features
Wide Operating Frequency Range
Extreme Ruggedness
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Extended ESD Protection Circuit
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel.
1.8--2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
MRFE6VS25NR1
MRFE6VS25GNR1
Note: The backside of the package is the
source terminal for the transistor.
(Top View)
Drain
12
Figure 1. Pin Connections
Gate
T O -- 2 7 0 -- 2
PLASTIC
MRFE6VS25NR1
T O -- 2 7 0 -- 2 G U L L
PLASTIC
MRFE6VS25GNR1
Document Number: MRFE6VS25N
Rev. 1, 12/2012
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2012.
A
ll rights reserved.
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MRFE6VS25NR1 数据手册 PDF

MRFE6VS25NR1 应用笔记
Avnet
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