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MRFE6VS25LR5
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFET
RF power transistor designed for both narrowband and broadband ISM,
broadcast and aerospace applications operating at f requencies f rom 1.8 to
2000 MHz . This device is fabric ated using Freesc ale’s enhanced ruggedness
platform and is suitable for use in applications where high VSWRs are
encountered.
Typical Performance: V
DD
=50Volts
Frequency
(MHz)
Signal Type
P
out
(W)
G
ps
(dB)
η
D
(%)
IMD
(dBc)
1.8--30
(1,3)
Two--Tone
(10 kHz spacing)
25 PEP 25.0 50.0 -- 2 8
30--512
(2,3)
Two--Tone
(200 kHz spacing)
25 PEP 17.3 32.0 -- 3 2
512
(4)
Pulse
(100 μsec, 20%
Duty Cycle)
25 Peak 25.9 74.0 —
512
(4)
CW 25 26.0 75.0 —
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal Type VSWR
P
in
(W)
Test
Voltage
Result
30
(1)
CW
>65:1
at all Phase
Angles
0.11
(3 dB
Overdrive)
50 No Device
Degradation
512
(2)
CW 0.95
(3 dB
Overdrive)
512
(4)
Pulse
(100 μsec, 20%
Duty Cycle)
0.14 Peak
(3 dB
Overdrive)
512
(4)
CW 0.14
(3 dB
Overdrive)
1. Measured in 1.8--30 MHz broadband reference circuit.
2. Measured in 30--512 MHz broadband reference circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
4. Measured in 512 MHz narrowband test circuit.
Features
• Wide Operating Frequency Range
• Extreme Ruggedness
• Unmatched, Capable of Very Broadband Operation
• Integrated Stability Enhancements
• Low Thermal Resistance
• Extended ESD Protection Circuit
• In Tape and Reel. R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel.
Document Number: MRFE6VS25L
Rev. 0, 10/2012
Freescale Semiconductor
Technical Data
1.8--2000 MHz, 25 W, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTOR
MRFE6VS25LR5
Note: The backside of the package is the
source terminal for the transistor.
N I -- 3 6 0 -- 2
(Top View)
Drain
12
Figure 1. Pin Connections
Gate
© Freescale Semiconductor , Inc., 2012.
A
ll rights reserved.
