This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
■ The worldwide best RDS(on)area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities.