This fast-switching STGWT80H65FB IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 469000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop|trench technology.
