This STGB10NB37LZT4 IGBT transistor from STMicroelectronics will work perfectly in your circuit. It has a maximum collector emitter voltage of 440 V. Its maximum power dissipation is 125000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C.