The STD5NM50T4 is a MDmesh™ N-channel Power MOSFET associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low On-resistance, impressively high dV/dt and excellent avalanche characteristics. The strip technique yields overall dynamic performance. It is suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
0.7R RDS (ON)
High dV/dt and avalanche capabilities
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Tight process control and high manufacturing yields