This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The main features of this product include remarkably low on-resistance per unit area and very good switching performance. The variation of both RDS(on) and switching losses are almost independent from junction temperature.
**Key Features**
Designed for automotive applications
Tight variation of on-resistance vs. temperature
Very fast and robust intrinsic body diode
Very high operating temperature capability (TJ = 200 °C)