The S29GL512P11FFI010 is a 512MB page mode Mirrorbit® Flash Memory fabricated on 90nm process technology. This device offers a fast page access time of 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
Highest address sector protected
Enhanced Versatile I/O™ control
Secured silicon sector region
Can be programmed and locked at the factory or by the customer
100000 Erase cycles per sector typical
20 Years data retention typical
Suspend and resume commands for program and erase operations
Write operation status bits indicate program and erase operation completion
Unlock bypass program command - Reduces programming time
Support for CFI
Persistent and password methods of advanced sector protection
WP#/ACC input - Protects first or last sector regardless of sector protection settings
Accelerates programming time for greater throughput during system production
Hardware reset input resets device
Ready/busy# output detects program or erase cycle completion
