Key FeaturesExcellent power handling: 36 dBm CW and 38 dBm pulsed power in 50Ω @ 8 GHz * High linearity: IIP3 of 66 dBm * High isolation * 45 dB @ 3 GHz * 41 dB @ 8 GHz * HaRP™ technology enhanced * Fast settling time * No gate and phase lag * No drift in insertion loss and phase * High ESD performance * 2.5 kV HBM on all pins, 4 kV HBM on RF pins to GND * 1 kV CDM on all pins * Packaging: 16–lead 3 × 3 mm QFN
