The NDS332P is a P-channel logic level enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It is particularly suited for low voltage applications such as battery powered circuits where fast high-side switching and low in-line power loss are needed in a very small outline surface-mount package.
Very low level gate drive requirements allowing direct operation
Proprietary package design using copper lead-frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS (ON)
Exceptional ON-resistance and maximum DC current capability
