This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time.
Features
•Avalanche Energy Specified
•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
•Diode is Characterized for Use in Bridge Circuits
•IDSSand VDS(on)Specified at Elevated Temperature
•Short Heatsink Tab Manufactured − Not Sheared
•Specially Designed Leadframe for Maximum Power Dissipation