The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.
Features
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High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)
Closely Matched Current Transfer Ratio (CTR)
Minimizes Unit-to-Unit Variation
Current Transfer Ratio In Select Groups
Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)
Safety and Regulatory Approvals:
UL1577, 4,170 VACRMS for 1 Minute
DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
