The MMZ25332BT1 is a 2-stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W-CDMA, TD-SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W-CDMA air interfaces with an ACPR of -50 dBc at an output power of up to 22 dBm, covering frequencies from 1500-2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost-effective, surface mount QFN 3 x 3 package. The device offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
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## Features
* Frequency: 1500-2800 MHz
* P1dB: 33 dBm @ 2500 MHz
* Power Gain: 26.5 dB @ 2500 MHz
* OIP3: 48 dBm @ 2500 MHz
* EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
* Active Bias Control (adjustable externally)
* Power Down Control via VBIAS Pin
* Class 3A HBM ESD Rating
* Single 3 to 5 V Supply
* Single-ended Power Detector
* Cost-effective 12-pin, 3 mm QFN Surface Mount Plastic Package
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7-inch Reel.
