The JS28F512M29EWHA is a 512MB asynchronous uniform block parallel NOR Flash EMBedded Memory manufactured on 65nm multilevel cell (MLC) technology. READ, ERASE and PROGRAM operations are performed using a single low-voltage supply. Upon power-up, the device defaults to read array mode. The main memory array is divided into uniform blocks that can be erased independently so that valid data can be preserved while old data is purged. PROGRAM and ERASE commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all special operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error condition can be identified. The command set required to control the device is consistent with JEDEC standards. The M29EW supports asynchronous random read and page read from all blocks of the array.
Asynchronous random/page read
Buffer program - 512-word program buffer
Memory organization - uniform blocks - 128-Kbytes or 64-Kwords each
Program/erase controller - embedded byte/word program algorithms
Program/erase suspend and resume capability
Read from any block during a PROGRAM SUSPEND operation
Read or program another block during an ERASE SUSPEND operation
BLANK CHECK operation to verify an erased block
Unlock bypass, block erase, chip erase and write to buffer capability
Fast buffered/batch programming
Fast block/chip erase
VPP/WP# pin protection - protects first or last block regardless of block protection settings
Software protection
Extended memory block
Programmed or locked at the factory or by the customer
