Don"t be afraid to step up the amps in your device when using this IXGT32N170 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1700 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.