The IRLR9343PBF is a HEXFET® single P-channel MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device.
Advanced process technology
Low RDS (ON) for improved efficiency
Low Qg and Qsw for better THD and improved efficiency
Low QRR for better THD and lower EMI
Repetitive avalanche capability for robustness and reliability