The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).
Summary of Features:
The lowest V F: 1.25V
Best-in-class figure of merit (Q c x V F)
No reverse recovery charge
Temperature independent switching behavior
High dv/dt ruggedness
Optimized thermal behavior
Benefits:
Improved system efficiency over all load conditions
Increased system power density
Reduced cooling requirements and increased system reliability