The BSC120N03MS G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
Easy to design in
Increased battery lifetime
Improved EMI behaviour making external snubber networks obsolete
Saving space
Reducing power losses
Fast switching MOSFET for SMPS
Optimized for 5V driver application
Low FOMSW for high frequency SMPS
100% Avalanche tested
Very low ON-resistance RDS (ON) @ VGS = 4.5V
Excellent gate charge x RDS (ON) product (FOM)
Qualified according to JEDEC for target applications