The BSB044N08NN3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
Optimized technology for DC-to-DC converters
Excellent gate charge x RDS (ON) product (FOM)
Superior thermal resistance
Dual sided cooling
Low parasitic inductance
Low profile
Normal level
100% avalanche tested
Qualified according to JEDEC for target applications
Compatible with DirectFET® package MN footprint and outline