The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
Advanced process technology
New ultra low on-resistance
Repetitive avalanche allowed up to Tjmax
Automotive qualified
175°C Operating temperature
ESD sensitive device, take proper precaution while handling the device.