Don"t be afraid to step up the amps in your device when using this APT15GP60BDQ1G IGBT transistor from Microsemi. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.