The ADuM3223/ADuM4223 are 4 A isolated, half-bridge gate drivers that employ the Analog Devices, Inc.,_ i_Coupler® technology to provide independent and isolated high-side and low-side outputs. The ADuM3223 provides 3000 V rms isolation in the narrow body, 16-lead SOIC package, and the ADuM4223 provides 5000 V rms isolation in the wide body, 16-lead SOIC package. Combining high speed CMOS and monolithic transformer technology, these isolation components provide outstanding performance characteristics superior to the alternatives, such as the combination of pulse transformers and gate drivers.
The ADuM3223/ADuM4223 isolators each provide two independent isolated channels. They operate with an input supply ranging from 3.0 V to 5.5 V, providing compatibility with lower voltage systems. In comparison to gate drivers employing high voltage level translation methodologies, the ADuM3223/ ADuM4223 offer the benefit of true, galvanic isolation between the input and each output. Each output may be continuously operated up to 537 V peak relative to the input, thereby supporting low-side switching to negative voltages. The differential voltage between the high-side and low-side may be as high as 800 V peak.
As a result, the ADuM3223/ADuM4223 provide reliable control over the switching characteristics of IGBT/MOSFET configurations over a wide range of positive or negative switching voltages.
**Applications**
Switching power supplies
Isolated IGBT/MOSFET gate drives
Industrial inverters
Automotive
### Features and Benefits
4 A peak output current
Working voltage
High-side or low-side relative to input: 537 V peak
High-side to low-side differential: 800 V peak
High frequency operation: 1 MHz maximum
3.3 V to 5 V CMOS input logic
4.5 V to 18 V output drive
UVLO at 2.5 V VDD1
ADuM3223A/ADuM4223A UVLO at 4.1 V VDD2
ADuM3223B/ADuM4223B UVLO at 7.0 V VDD2
ADuM3223C/ADuM4223C UVLO at 11.0 V VDD2
Precise timing characteristics
54 ns maximum isolator and driver propagation delay
5 ns maximum channel-to-channel matching
CMOS input logic levels
High common-mode transient immunity:>25 kV/μs
Enhanced system-level ESD performance per IEC 61000-4-x
