* Low collector to emitter saturation voltage * VCE(sat) = 1.35V typ. (at IC = 50A, VGE = 15V, Ta = 25℃) * Built in fast recovery diode in one package * Trench gate and thin wafer technology * High speed switching * tf = 74ns typ. (at IC = 30A, VCE = 400V, VGE = 15V, Rg = 5Ω, Ta = 25℃, inductive load)
