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IS43DR16160B-3DBL 数据手册 Datasheet - Integrated Silicon Solution(ISSI)

制造商：
Integrated Silicon Solution(ISSI)
分类：
存储,芯片,内存,存储器
封装：
TFBGA-84
描述：
256M, 1.8V, DDR2, 16Mx16, 333MHz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS
文档：

IS43DR16160B-3DBL 数据手册 (47 页)

引脚定义在 3页 5页 Hot

封装外形尺寸在 46页

型号规则信息在 45页

更新时间： 2024/03/29 05:24:25 (UTC+8)

IS43DR16160B-3DBL 数据手册PDF (47 页)

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IS43DR16160B-3DBL 文档

IS43DR16160B-3DBL 数据手册

Integrated Silicon Solution(ISSI)

47 页, 1126 KB

IS43DR16160B-3DBL 其它数据手册

Integrated Silicon Solution(ISSI)

47 页, 1022 KB

IS43DR16160B3 数据手册PDF

IS43DR16160B-3DBLI
数据手册

Integrated Silicon Solution(ISSI)

256M, 1.8V, DDR2, 16Mx16, 333MHz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS, IT

IS43DR16160B-3DBL
数据手册

Integrated Silicon Solution(ISSI)

256M, 1.8V, DDR2, 16Mx16, 333MHz @ CL5, 84 ball BGA (8mmx12.5mm) RoHS

IS43DR16160B-37CBLI
数据手册

Integrated Silicon Solution(ISSI)

256M, 1.8V, DDR2, 16Mx16, 267MHz @ CL4, 84 ball BGA (8mmx12.5mm) RoHS, IT

IS43DR16160B-37CBL
产品设计参考

Integrated Silicon Solution(ISSI)

256M, 1.8V, DDR2, 16Mx16, 267MHz @ CL4, 84 ball BGA (8mmx12.5mm) RoHS

IS43DR16160B-37CBL-TR
数据手册

Integrated Silicon Solution(ISSI)

DRAM 256Mb, 1.8V, 267MHz 16M x 16 DDR2

IS43DR16160B-3DBL-TR
数据手册

Integrated Silicon Solution(ISSI)

DRAM 256Mb, 1.8V, 333MHz 16M x 16 DDR2

IS43DR16160B-37CBLI-TR
数据手册

Integrated Silicon Solution(ISSI)

DRAM 256Mb, 1.8V, 267MHz 16M x 16 DDR2

IS43DR16160B-3DBLI-TR
数据手册

Integrated Silicon Solution(ISSI)

DRAM 256Mb, 1.8V, 333MHz 16M x 16 DDR2

IS43DR16160B-3DBI
其它数据手册

Integrated Silicon Solution(ISSI)

DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84, 8 X 12.5MM, 1.2MM HEIGHT, 0.8MM PITCH, LEAD FREE, TWBGA-84

IS43DR16160B-3DBI-TR
数据手册

Integrated Silicon Solution(ISSI)

256M, 1.8V, DDR2, 16Mx16, 333MHz @ CL5, 84 ball BGA (8mmx12.5mm) IT, T&R

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