IRS21271S 数据手册 Datasheet - Infineon

制造商：
Infineon
封装：
SOIC
描述：
600V High Side Driver IC with typical 0.29A source and 0.6A sink currents in package for IGBTs and MOSFETs. Also available in 8 Lead PDIP.
文档：

IRS21271S 数据手册 (21 页) Hot

封装外形尺寸在 19页

型号规则信息在 21页

IRS21271S 产品设计参考 (48 页)

IRS21271S 应用笔记 (30 页)

更新时间： 2024/05/31 01:52:12 (UTC+8)

IRS21271S 数据手册PDF (21 页)

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IRS21271S 文档

IRS21271S 数据手册

Infineon

21 页, 1570 KB

IRS21271S 产品设计参考

Infineon

48 页, 7466 KB

IRS21271S 其它数据手册

Infineon

73 页, 3004 KB

IRS21271S 应用笔记

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30 页, 426 KB

IRS21271 数据手册PDF

IRS21271
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600V High Side Driver IC with typical 0.29A source and 0.6A sink currents in 8 Lead PDIP package for IGBTs and MOSFETs. Also available in 8 Lead SOIC.

IRS21271
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Power MOSFET and IGBT Driver, Current Sensing, 1CH/Hi Side, 600V, 8Pin SOIC, Tube

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MOSFET DRVR 600V 0.6A 1Out Hi Side Non-Inv 8Pin SOIC T/R

IRS21271PBF
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MOSFET DRVR 600V 0.6A 1Out Hi Side Non-Inv 8Pin PDIP Tube

IRS21271STRPBF
数据手册