IRF610S 数据手册 Datasheet - VISHAY

更新时间： 2023/12/26 01:06:25 (UTC+8)

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IRF610S 文档

IRF610S 数据手册

VISHAY

8 页, 1095 KB

International Rectifier

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

VISHAY

MOSFET N-CH 200V 3.3A TO-220AB

Intersil

Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB

Vishay Siliconix

MOSFET N-CH 200V 3.3A TO-220AB

Harris

MOSFET N-CH 200V 3.3A TO-220AB

Vishay Semiconductor

Trans MOSFET N-CH 200V 3.3A 3Pin(3+Tab) TO-220AB

Fairchild

Trans MOSFET N-CH Si 200V 2.5A 3Pin(3+Tab) TO-220AB

Motorola

2.5A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Samsung

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Microsemi

Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

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