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IKW30N65ES5 数据手册 Datasheet - Infineon

更新时间: 2023/12/02 04:44:53 (UTC+8)
IKW30N65ES5 数据手册PDF (16 页)
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IKW30N65ES5 文档

IKW30N65ES5 数据手册
Infineon
16 页, 1919 KB
IKW30N65ES5 产品设计参考
Infineon
270 页, 11877 KB
IKW30N65ES5 其它数据手册
Infineon
73 页, 3004 KB
IKW30N65ES5 应用笔记
Infineon
34 页, 1178 KB

IKW30N65 数据手册PDF

IKW30N65EL5XKSA1
数据手册
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65H5XKSA1
数据手册
Infineon
Trans IGBT Chip N-CH 650V 55A 188000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65H5
数据手册
Infineon
Transistor: IGBT; 650V; 35A; 94W; TO247-3; TRENCHSTOP™ 5; Series: H5
IKW30N65ES5XKSA1
数据手册
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65NL5XKSA1
数据手册
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65WR5XKSA1
数据手册
Infineon
Trans IGBT Chip N-CH 650V 60A 185000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65EL5
数据手册
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65ES5
数据手册
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
IKW30N65NL5
数据手册
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
IKW30N65WR5
数据手册
Infineon
The reverse conducting TRENCHSTOP™ 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar.
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