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FF450R12KE4EHOSA1
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FF450R12KE4EHOSA1 数据手册 Datasheet - Infineon

更新时间: 2024/05/30 05:30:11 (UTC+8)
FF450R12KE4EHOSA1 数据手册PDF (1 页)
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FF450R12KE4EHOSA1 文档

FF450R12KE4EHOSA1 数据手册
Infineon
1 页, 63 KB
FF450R12KE4EHOSA1 产品设计参考
Infineon
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FF450R12KE4EHOSA1 其它数据手册
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FF450R12KE4EHOSA1 应用笔记
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FF450R12KE4 数据手册PDF

FF450R12KE4
数据手册
Infineon
Trans IGBT Module N-CH 1200V 520A 2400000mW 7Pin 62MM Tray
FF450R12KE4HOSA1
数据手册
Infineon
IGBT Array & Module Transistor, Dual NPN, 520A, 1.75V, 2.4kW, 1.2kV, Module
FF450R12KE4EHOSA1
数据手册
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
FF450R12KE4PHOSA1
数据手册
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
FF450R12KE4_E
数据手册
Infineon
Our well-known 62mm C-series 1200V Common Emitter IGBT modules with Emitter Controlled HE diode and fast trench/fieldstop IGBT4. 3-level phase leg configurations are possible in combination with our 1200V 62mm dual modules (e.g. FF450R12KE4).
FF450R12KE4P
数据手册
Infineon
Our well-known 62mm 1200V dual IGBT modules with trench/fieldstop IGBT4, optimized Emitter Controlled Diode and pre-applied Thermal Interface Material are the right choice for your design.
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