Datasheet
数据手册 > 英飞凌 > BTS3125EJ 数据手册PDF

BTS3125EJ 数据手册 Datasheet - Infineon

  • 制造商:
    Infineon
  • 封装:
    PG-TDSO-8
  • 描述:
    The BTS3125EJ is a 125mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125EJ is automotive qualified and is optimizedfor 12V automotive applications.
  • 文档:
更新时间: 2024/03/26 16:37:57 (UTC+8)
BTS3125EJ 数据手册PDF (138 页)
点击页面查看数据手册详情

BTS3125EJ 文档

BTS3125EJ 产品设计参考
Infineon
138 页, 12344 KB
BTS3125EJ 其它数据手册
Infineon
45 页, 1345 KB

BTS3125 数据手册PDF

BTS3125TF
产品设计参考
Infineon
LSS 125mOhm 40V TO252-3 SMD
BTS3125EJXUMA1
产品设计参考
Infineon
MOS Power Transistors HV (>= 200V)
BTS3125TFATMA1
产品设计参考
Infineon
MOS Power Transistors HV (>= 200V)
BTS3125EJ
产品设计参考
Infineon
The BTS3125EJ is a 125mΩ single channel Smart Low-Side Power Switch with in a PG-TDSO8-31 package providing embedded protective functions. The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3125EJ is automotive qualified and is optimizedfor 12V automotive applications.
BTS3125TFDEMOBOARDTOBO1
其它数据手册
Infineon
BTS3125TF Low-Side Power Switch Demonstration Board
BTS3125EJDEMOBOARDTOBO1
其它数据手册
Infineon
BTS3125EJ DEMOBOARD
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个元件的数据手册,每天更新超过5,000个PDF文件。
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送