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数据手册 > MOS管,场效应管,晶体管,金属氧化物,FET > ST Microelectronics > STF7LN80K5 数据手册PDF > STF7LN80K5 产品设计参考 第 1/24 页
STF7LN80K5
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STF7LN80K5 产品设计参考 - ST Microelectronics

  • 制造商:
    ST Microelectronics
  • 分类:
    MOS管,场效应管,晶体管,金属氧化物,FET
  • 封装
    TO-220-3
  • 描述:
    TO-220FP N-CH 800V 5A
  • 页面指南:
更新时间: 2025-06-01 13:17:31 (UTC+8)

STF7LN80K5 产品设计参考

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November 2013 Doc ID 023670 Rev 1 1/24
UM1575
User manual
Spice model tutorial for Power MOSFETs
Introduction
This document describes ST’s Spice model versions available for Power MOSFETs. This is
a guide designed to support user choosing the best model for his goals. In fact, it explains
the features of different model versions both in terms of static and dynamic characteristics
and simulation performance, in order to find the right compromise between the computation
time and accuracy. For example, the self-heating model (V3 version), which accurately
reproduces the thermal response of all electrical parameters, requires a considerable
simulation effort.
Finally, an example shows how the self-heating model works.
Spice models describe the characteristics of typical devices and don't guarantee the
absolute representation of product specifications and operating characteristics; the
datasheet is the only document providing product specifications.
Although simulation is a very important tool to evaluate the device’s performance, the exact
device’s behavior in all situations is not predictable, therefore the final laboratory test is
necessary.
www.st.com
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页面指南

STF7LN80K5 数据手册 PDF

STF7LN80K5 产品设计参考
ST Microelectronics
24 页, 1550 KB
STF7LN80K5 产品设计图
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15 页, 773 KB
STF7LN80K5 应用笔记
ST Microelectronics
27 页, 881 KB
STF7LN80K5 产品封装文件
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STF7LN80 数据手册 PDF

STF7LN80K5
产品设计参考
ST Microelectronics
TO-220FP N-CH 800V 5A
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