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数据手册 > MOS管,场效应管,晶体管,金属氧化物,FET > ST Microelectronics > STB80N4F6AG 数据手册PDF > STB80N4F6AG 产品设计参考 第 1/24 页
STB80N4F6AG
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STB80N4F6AG 产品设计参考 - ST Microelectronics

  • 制造商:
    ST Microelectronics
  • 分类:
    MOS管,场效应管,晶体管,金属氧化物,FET
  • 封装
    TO-263-3
  • 描述:
    Trans MOSFET N-CH 40V 80A Automotive 3Pin(2+Tab) D2PAK T/R
  • 页面指南:
更新时间: 2025-04-21 07:47:41 (UTC+8)

STB80N4F6AG 产品设计参考

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November 2013 Doc ID 023670 Rev 1 1/24
UM1575
User manual
Spice model tutorial for Power MOSFETs
Introduction
This document describes ST’s Spice model versions available for Power MOSFETs. This is
a guide designed to support user choosing the best model for his goals. In fact, it explains
the features of different model versions both in terms of static and dynamic characteristics
and simulation performance, in order to find the right compromise between the computation
time and accuracy. For example, the self-heating model (V3 version), which accurately
reproduces the thermal response of all electrical parameters, requires a considerable
simulation effort.
Finally, an example shows how the self-heating model works.
Spice models describe the characteristics of typical devices and don't guarantee the
absolute representation of product specifications and operating characteristics; the
datasheet is the only document providing product specifications.
Although simulation is a very important tool to evaluate the device’s performance, the exact
device’s behavior in all situations is not predictable, therefore the final laboratory test is
necessary.
www.st.com
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STB80N4F6AG 数据手册 PDF

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STB80N4F6 数据手册 PDF

STB80N4F6AG
产品设计参考
ST Microelectronics
Trans MOSFET N-CH 40V 80A Automotive 3Pin(2+Tab) D2PAK T/R
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