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Si9433DY
Vishay Siliconix
Document Number: 70125
S-00652—Rev. J, 27-Mar-00
www.vishay.com FaxBack 408-970-5600
1
P-Channel 20-V (D-S) MOSFET
V
DS
(V) r
DS(on)
() I
D
(A)
–
20
0.045 @ V
GS
= –4.5 V 5.4
–
20
0.070 @ V
GS
= –2.7 V 4.2
SD
S
D
SD
G
D
SO-8
5
6
7
8
Top View
2
3
4
1
SSS
G
D DD D
P-Channel MOSFET
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
–20
V
Gate-Source Voltage V
GS
12
V
Continuous Drain Current (T
J
=
150
C)
a
T
A
= 25C
I
D
5.4
A
Continuous
Drain
Current
(T
J
=
150C)
a
T
A
= 70C
I
D
4.4
A
Pulsed Drain Current I
DM
20
A
Continuous Source Current (Diode Conduction)
a
I
S
–2.6
Maximum Power Dissipation
a
T
A
= 25C
P
D
2.5
W
Maximum
Power
Dissipation
a
T
A
= 70C
P
D
1.6
W
Operating Junction and Storage Temperature Range T
J
, T
stg
–55 to 150 C
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient
a
R
thJA
50 C/W
Notes
a. Surface Mounted on FR4 Board, t 10 sec.
