下载
MW6S004NT1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement - Mode Lateral MOSFET
Designed for Class A or Class AB base station applications with frequencies
up to 2000 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
• Typical Two-Tone Performance @ 1960 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain — 18 dB
Drain Efficiency — 33%
IMD — - 34 dBc
• Typical Two-Tone Performance @ 900 MHz, 28 Volts, I
DQ
= 50 mA,
P
out
= 4 Watts PEP
Power Gain — 19 dB
Drain Efficiency — 33%
IMD — - 39 dBc
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1960 MHz, 4 Watts CW Output
Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On- Chip RF Feedback for Broadband Stability
• Integrated ESD Protection
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +68 Vdc
Gate-Source Voltage V
GS
-0.5, +12 Vdc
Storage Temperature Range T
stg
- 65 to +150 °C
Operating Junction Temperature T
J
150 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 76°C, 4 W PEP, Two - Tone
Case Temperature 79°C, 4 W CW
R
θ
JC
8.8
8.5
°C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1C (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S004N
Rev. 4, 6/2009
Freescale Semiconductor
Technical Data
MW6S004NT1
1- 2000 MHz, 4 W, 28 V
LATERAL N -CHANNEL
RF POWER MOSFET
CASE 466-03, STYLE 1
PLD 1.5
PLASTIC
Freescale Semiconductor, Inc., 2007, 2009. All rights reserved.
