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MRF6V3090N MRF6V3090NB
1
RF Device Data
Freescale Semiconductor , Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadc ast and commercial aerospace broadband applications
with frequencies from 470 to 1215 MHz.
Typical Performance (UHF 470--860 Reference Circuit): V
DD
=50Volts,
I
DQ
= 450 mA, 64 QAM, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Signal Type
P
out
(W)
f
(MHz)
G
ps
(dB)
D
(%)
Output
Signal PAR
(dB)
IMD
Shoulder
(dBc)
DVB--T (8k OFDM) 18 Avg.
470 21.6 26.8 8.6 --31.8
650 22.9 28.0 8.7 --34.4
860 21.9 28.3 7.9 --29.2
Typical Performance (L--Band 960--1215 MHz Reference Circuit):
V
DD
=50Volts,I
DQ
= 100 mA.
Signal Type
P
out
(W)
f
(MHz)
P
in
(W)
G
ps
(dB)
D
(%)
Pulse
(128 sec, 10% Duty
Cycle)
90 Peak
960 1.3 18.4 55.3
1030 1.41 18 56.9
1090 1.65 17.4 50.7
1215 1.68 17.3 51.0
Features
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz,
90 Watts CW Output Power
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Excellent Thermal Stability
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Document Number: MRF6V3090N
Rev. 2, 10/2015
Freescale Semiconductor
Technical Data
470--1215 MHz, 90 W, 50 V
BROADBAND
RF POWER LDMOS TRANSISTORS
PARTS ARE SINGLE--ENDED
(Top View)
Drain
Figure 1. Pin Connections
Drain
Gate
Gate
Note: Exposed backside of the package is
the source terminal for the transistor.
TO--272WB--4
PLASTIC
MRF6V3090NB
TO--270WB--4
PLASTIC
MRF6V3090N
MRF6V3090N
MRF6V3090NB
Freescale Semiconductor, Inc., 2010--2011, 2015.
A
ll rights reserved.
