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© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 4
1 Publication Order Number:
MBD101/D
MBD101G, MMBD101LT1G
Schottky Barrier Diodes
Designed primarily for UHF mixer applications but suitable also for
use in detector and ultra−fast switching circuits. Supplied in an
inexpensive plastic package for low−cost, high−volume consumer
requirements. Also available in Surface Mount package.
Features
• Low Noise Figure − 6.0 dB Typ @ 1.0 GHz
• Very Low Capacitance − Less Than 1.0 pF
• High Forward Conductance − 0.5 V (Typ) @ I
F
= 10 mA
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
7.0 V
Forward Power Dissipation
T
A
= 25°C MBD101
MMBD101LT1
Derate above 25°C MBD101
MMBD101LT1
P
F
280
225
2.2
1.8
mW
mW/°C
Junction Temperature T
J
+150 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
7.0 10 − V
Diode Capacitance
(V
R
= 0, f = 1.0 MHz,
Note 1, page 2)
C
D
− 0.88 1.0 pF
Forward Voltage
(I
F
= 10 mA)
V
F
− 0.5 0.6 V
Reverse Leakage
(V
R
= 3.0 V)
I
R
− 0.02 0.25
mA
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
SOT−23 (TO−236)
CASE 318
STYLE 8
1
2
3
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MBD101G TO−92
(Pb−Free)
5000 Units / Box
MMBD101LT1G SOT−23
(Pb−Free)
3000 / Tape & Ree
l
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
4M M G
G
A = Assembly Location
Y = Year
W = Work Week
4M = Device Code (SOT−23)
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING
DIAGRAMS
3
CATHODE
1
ANODE
2
CATHODE
1
ANODE
(Pin 2 Not Connected)
TO−92 2−Lead
CASE 182
STYLE 1
1
2
SILICON SCHOTTKY
BARRIER DIODES
MBD
101
AYW G
G
www.onsemi.com
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