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Single Silicon Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC–59 package which is designed for low power surface mount
applications.
• Fast t
rr
, < 3.0 ns
• Low C
D
, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Reverse Voltage
M1MA151KT1
V
R
40
Vdc
M1MA152KT1 80
Peak Reverse Voltage
M1MA151KT1
V
RM
40
Vdc
M1MA152KT1 80
Forward Current I
F
100 mAdc
Peak Forward Current I
FM
225 mAdc
Peak Forward Surge Current I
FSM
(1)
500 mAdc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation P
D
200 mW
Junction Temperature T
J
150 °C
Storage Temperature T
stg
–55 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current
M1MA151KT
1
I
R
V
R
= 35 V — 0.1
µAdc
M1MA152KT
1
V
R
= 75 V — 0.1
Forward Voltage V
F
I
F
= 100 mA — 1.2 Vdc
Reverse Breakdown Voltage
M1MA151KT
1
V
R
I
R
= 100 µA
40 —
Vdc
M1MA152KT
1
80 —
Diode Capacitance C
D
V
R
= 0, f = 1.0 MHz — 2.0 pF
Reverse Recovery Time t
rr
(2)
I
F
= 10 mA, V
R
= 6.0 V,
R
L
= 100 Ω, I
rr
= 0.1 I
R
— 3.0 ns
1. t = 1 SEC
2. t
rr
Test Circuit
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 4
1 Publication Order Number:
M1MA151KT1/D
M1MA151KT1
M1MA152KT1
SC–59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
ON Semiconductor Preferred Devices
CASE 318D–04, STYLE 2
SC–59
2
1
3
CATHODE
3
2
ANODE
1
NO CONNECTION
