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© 2004 IXYS All rights reserved
G = Gate D = Drain
S = Source TAB = Drain
DS99118B(07/04)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified) Min. Typ. Max.
V
DSS
V
GS
= 0 V, I
D
= 250 µA 250 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250µA 2.5 5.0 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= V
DSS
25 µA
V
GS
= 0 V T
J
= 125°C 250 µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
27 mΩ
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHT
TM
Power MOSFET
IXTQ 100N25P V
DSS
= 250 V
IXTK 100N25P I
D25
= 100 A
IXTT 100N25P
R
DS(on)
= 27 m
ΩΩ
ΩΩ
Ω
Advanced Technical Information
N-Channel Enhancement Mode
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-268 (IXTT)
G
S
TO-264(SP) (IXTK)
G
D
S
D (TAB)
D (TAB)
G
D
S
(TAB)
TO-3P (IXTQ)
G = Gate, D = Drain,
S = Source, TAB = Drain
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 250 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 250 V
V
GSM
±20 V
I
D25
T
C
= 25°C 100 A
I
D(RMS)
External lead current limit 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
250 A
I
AR
T
C
= 25°C60A
E
AR
T
C
= 25°C60mJ
E
AS
T
C
= 25°C 2.0 J
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 10 V/ns
T
J
≤ 150°C, R
G
= 4 Ω
P
D
T
C
= 25°C 600 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-264 10 g
TO-268 5 g
