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©2001 Fairchild Semiconductor Corporation
March 2001
Rev. A, March 2001
FQA7N90
QFET
TM
FQA7N90
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 7.4A, 900V, R
DS(on)
= 1.55Ω @V
GS
= 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQA7N90 Units
V
DSS
Drain-Source Voltage 900 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
7.4 A
- Continuous (T
C
= 100°C)
4.7 A
I
DM
Drain Current - Pulsed
(Note 1)
29.6 A
V
GSS
Gate-Source Voltage ± 30 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
830 mJ
I
AR
Avalanche Current
(Note 1)
7.4 A
E
AR
Repetitive Avalanche Energy
(Note 1)
22 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
4.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
220 W
- Derate above 25°C 1.75 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +150 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter Typ Max Units
R
θJC
Thermal Resistance, Junction-to-Case -- 0.57 °C/W
R
θCS
Thermal Resistance, Case-to-Sink 0.24 -- °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient -- 40 °C/W
TO-3P
FQA Series
G
SD
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