Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN ZTX458 GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V.