Power MOSFET ■GENERAL DESCRIPTION The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V Rds(on)=0.105Ω@ Vgs=4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89
