TPS54620RGYTTIStep-Down Regulator 4.5V to 17V Input, 6A Synchronous Step Down SWIFT Converter Conv DC-DC 1.6V to 17V Step Down Single-Out 0.8V to 15V 6A 14Pin VQFN EP T/R
￥
24.49
显示的图像仅供参考，应从产品数据表中获得准确的规格。
TPS54620RGYTTI
制造商:
TI
制造商型号#:
TPS54620RGYT
百芯编号#:
CM116450
价格(CNY):
￥
24.49
百芯库存:
248
个
库存地点:
可供应量:
177
个在库
此为供应商库存，需要与销售确认
产品类别:
DCDC,转换器,DC-DC
产品描述:
Step-Down Regulator 4.5V to 17V Input, 6A Synchronous Step Down SWIFT Converter Conv DC-DC 1.6V to 17V Step Down Single-Out 0.8V to 15V 6A 14Pin VQFN EP T/R
The TPS54620RGYT is a 17V 6A Synchronous Step-down SWIFT™ Converter optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count and by selecting a high switching frequency, reducing the inductor"s footprint. The output voltage start-up ramp is controlled by the SS/TR pin which allows operation as either a standalone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins. Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperat
Integrated 26/19mR MOSFETs
Split power rail (1.6 to 17V on PVIN)
200kHz to 1.6MHz Switching frequency
Synchronizes to external clock
0.8V ±1% Voltage reference over-temperature
Low 2µA shutdown quiescent current
Monotonic start-up into pre-biased outputs
Adjustable slow start/power sequencing
Power good output monitor for under-voltage and overvoltage
Adjustable input under-voltage lockout
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
